Apparatuses and methods for concurrently accessing multiple memory planes of a memory during a memory access operation

ABSTRACT

Apparatuses and methods for performing concurrent memory access operations for multiple memory planes are disclosed herein. An example method may include receiving first and second command and address pairs associated with first and second plane, respectively, of a memory. The method may further include, responsive to receiving the first and second command and address pairs, providing a first and second read voltages based on first and second page type determined from the first and second command and address pair. The method may further include configuring a first GAL decoder circuit to provide one of the first read voltage or a pass voltage on each GAL of a first GAL bus. The method may further include configuring a second GAL decoder circuit to provide one of the second read level voltage signal or the pass voltage signal on each GAL of a second GAL bus coupled to the second memory plane.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of pending U.S. patent applicationSer. No. 16/401,089 filed May 1, 2019, which is a continuation of U.S.patent application Ser. No. 15/854,622 filed Dec. 26, 2017 and issued asU.S. Pat. No. 10,379,738 on Aug. 13, 2019, which is a continuation ofU.S. patent application Ser. No. 14/933,874, filed Nov. 5, 2015 andissued as U.S. Pat. No. 9,910,594 on Mar. 6, 2018. The aforementionedapplications, and issued patents, are incorporated by reference hereinin their entirety and for all purposes.

BACKGROUND

Memories may be provided in a variety of apparatuses, such as computersor other devices, including but not limited to portable memory devices,solid state drives, music players, cameras, phones, wireless devices,displays, chip sets, set top boxes, gaming systems, vehicles, andappliances. There are many different types of memory including volatilememory (e.g., dynamic random access memory (DRAM)) and non-volatilememory (e.g., flash memory). Flash memory architectures may include NANDor NOR architecture.

In non-volatile memories (e.g., NAND flash memories), memory arrays maybe divided into planes. Dividing a memory into memory planes may breakup rows or columns into smaller sections for accessing during memoryaccess operations. Breaking the memory up into memory planes may alsopresent an opportunity to access more than one portion of the memoryarray concurrently. Typically, concurrent access may require access ofmemory cells that are coupled through a single global access line (GAL)decoder circuit, which may limit an ability to concurrently accessmultiple pages on different columns (or wordlines) in different memoryplanes during random memory access requests.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an apparatus including a memory configuredto perform concurrent memory access of multiple memory planes accordingto an embodiment of the present disclosure.

FIG. 2 is a block diagram of memory configured to perform concurrentmemory access of multiple memory planes according to an embodiment ofthe present disclosure.

FIG. 3 is a block diagram of memory configured to perform concurrentmemory access of multiple memory planes according to an embodiment ofthe present disclosure.

FIG. 4 is a block diagram of memory configured to perform concurrentmemory access of multiple memory planes according to an embodiment ofthe present disclosure.

FIG. 5 is a block diagram of a portion of a memory configured to performconcurrent memory access of multiple memory planes according to anembodiment of the present disclosure.

FIG. 6 is an illustration of an exemplary voltage profile of a readlevel voltage according to an embodiment of the present disclosure.

FIG. 7 is an illustration of an exemplary voltage profile of a readlevel voltage according to an embodiment of the present disclosure.

DETAILED DESCRIPTION

Apparatuses and methods for concurrent access of multiple memory planesare disclosed herein. Certain details are set forth below to provide asufficient understanding of embodiments of the disclosure. However, itwill be clear to one having skill in the art that embodiments of thedisclosure may be practiced without these particular details. Moreover,the particular embodiments of the present disclosure described hereinare provided by way of example and should not be used to limit the scopeof the disclosure to these particular embodiments. In other instances,well-known circuits, control signals, timing protocols, and softwareoperations have not been shown in detail in order to avoid unnecessarilyobscuring the disclosure.

FIG. 1 is a block diagram of an apparatus 100 (e.g., an integratedcircuit, a memory device, a memory system, an electronic device orsystem, a smart phone, a tablet, a computer, a server, etc.) including amemory configured to perform concurrent memory access of multiple memoryplanes according to an embodiment of the present disclosure. Theapparatus 100 may include a memory 150. In some embodiments, the memory150 may be coupled to a controller 110 via a command, address, and data(CAD) bus 130. The memory 150 may be configured to receive commandsand/or addresses from the controller 110 over the CAD bus 130, and thememory may be configured to receive data and/or provide data over theCAD bus 130.

In some examples, the memory 150 may be a non-volatile memory, such asNAND, NOR, or phase-change memory. The memory 150 may include an arrayof cells organized across multiple planes (e.g., partitions). The memoryplanes may be divided into blocks, with each block having multiplememory cell pages. Each page may include a row or column of memory cellsthat are coupled to a respective access line. The memory 150 may providea read level voltage signal to an access line of a selected block of aplane during a memory access operation to erase, program, and/or readfrom a page of memory cells. The read level voltage profiles required toaccess data of a page of memory cells may depend on a page type. A pagetype may be based on a type of memory cell in the page (e.g., singlelevel cell SLC, multi-level cell MLC, triple level cell TLC, etc.) and alevel of the memory cells being accessed (e.g., upper page UP, lowerpage LP, middle page MP, for a SLC/MLC/TLC page). The memory 150 mayinclude circuitry that performs concurrent memory page accesses of twoor more memory planes. For example, the memory 150 may include arespective global access line (GAL) decoder circuit and a respectiveread level voltage regulator circuit associated with each memory planeof the memory 150 to facilitate concurrent access of pages of two ormore memory planes, including different page types. Each of the GALdecoder circuits may be coupled to a respective one of the memory planesvia a respective GAL bus. In some embodiments, the memory 150 mayfurther include one or more pass voltage circuits configured to providerespective pass voltage signals to each of the GAL decoder circuits. Insome embodiments, the memory page accesses are concurrent, for example,memory access operations for the respective memory pages at leastpartially temporally overlap. In some embodiments, memory accessoperations for the respective memory pages may occur simultaneously,however, embodiments of the invention are not limited to simultaneousmemory access operations.

In some examples, the memory 150 may include an internal controllerconfigured to control concurrent access of different pages of two ormore memory planes. That is, the internal controller may provide arespective set of GAL control signals to each of the GAL decodercircuits associated with the two or more memory planes in order tocontrol voltages provided on the respective GAL buses. The internalcontroller may further provide a respective read level voltage controlsignal to each of the read level voltage regulator circuits associatedwith the two or more memory planes to control the respective read levelvoltage profile provided on the respective read level voltage signals.The concurrent read accesses may be based on pairs of command andaddress data received from the controller 110 via the CAD bus 130. Theinternal controller may concurrently access the respective pages of eachof the two or more memory planes during the concurrent memory accessoperations, for example, by controlling, retrieving data from, and/orproviding data to page buffers associated with each of the two or morememory planes.

During operation, the memory 150 may receive a group of memory commandand address pairs. The received group of memory command and addresspairs may be provided by the controller 110 via the CAD bus. In someembodiments, the controller 110 may command concurrent read accesses bythe memory 150. The memory 150 may be configured to perform concurrentmemory operations (e.g., read operations or program operations) for twoor more memory planes associated with the group of memory command andaddress pairs. For example, when the group of memory command and addresspairs are read commands, the memory 150 may concurrently retrieve readdata from two or more memory planes of the memory 150. The memory 150may provide the read data to the controller 110 and receive the datafrom the controller 110 via the CAD bus 130. The memory 150 may provideadditional information to the controller 110 over the CAD bus 130 inresponse to particular commands. The information may indicate, forinstance, whether the memory 150 is available to perform a memoryoperation and/or an amount of time before the memory 150 may becomeavailable to perform a memory operation.

Typically, during a memory access operation, a procedure for accessingdata of a page may be dependent on a page type. That is, to read datafrom an MLC or TLC page, read level voltage profiles may depend on whichlevel (e.g., bit) of each memory cell of the page is being read. Forexample, if a bit in the LP of an MLC page is being read, a read levelvoltage signal having a first read level voltage profile may be providedto the associated GAL of the GAL bus and pass voltage signals having oneor more pass voltage profiles may be provided to other GALs of the GALbus during the read operation. That is, the pass voltage signals may allbe common voltages and voltage profiles, or some may have differentvoltages or voltage profiles. For example, the pass voltage provided toGALs adjacent to the GAL receiving the first read voltage may bedifferent than the pass voltage profiles provided to other remainingGALs. If a bit in the UP of a MLC page is being read, the read levelvoltage signal having a second and a third read level voltage profilemay be provided to the associated GAL of the GAL bus and the passvoltage signals having at least second and third pass voltage profilesmay be provided to other GALs of the GAL bus.

The internal controller may configure, for concurrent memory accessoperations, block controllers, voltage regulator circuits, and GALdecoder circuits for the two or more memory planes based on respectivepage type (e.g., UP, MP, LP, SLC/MLC/TLC page). In some embodiments,each memory plane may be associated with individual read level voltageregulator and pass voltage regulator circuits and a respectiveindividual GAL decoder circuit and a respective block controller. Forthe two or more memory planes, the internal controller may configure theindividual read level voltage regulator and pass voltage regulatorcircuits, the respective GAL decoder circuit, and the respective blockcontroller according to the particular memory access. For example, theinternal controller may configure a first block controller, a first GALdecoder circuit, first read level voltage regulator circuit, and a firstpass voltage regulator circuit for an UP read of a page within a blockof a first memory plane. Further, the internal controller maycontemporaneously configure a second block selector signal, a second GALdecoder circuit, a second read level voltage regulator, and a secondpass voltage regulator circuit for a LP read of a different page withina different block of a second memory plane. The configured first andsecond GAL decoder circuits may concurrently provide the respective readlevel voltage signals to the respective pages of each of the two or morememory planes via the respective GAL buses. The concurrent memory accessoperations may include, for example, charging bitlines, and sensing andlatching data at respective page buffers. In an example, the internalcontroller may control each of the read level voltage regulators toprovide a read level voltage signal having a common prologue voltageprofile and a common epilogue voltage profile that bookend anindependent read level voltage profile selected based on a targeted pagetype during the read operation. In other examples, the internalcontroller may control the read level voltage regulators to providerespective read level voltage signals having a common voltage profilethat includes read level voltages profiles associated with two or morememory page types (e.g., a first read level voltage signal associatedwith a first page type during a first time period, a second read levelvoltage signal associated with a second page type during a second timeperiod, etc.), and may control the page buffer circuits latch dataduring a time period corresponding to a respective read level voltagesignal having a voltage that corresponds to the targeted memory pagetype.

The common ramp through enabling all read level voltage signals mayincrease a read time operation, but may result in an internal controllerthat is less complex and physically smaller in size, as compared withthe internal controller configured to control each voltage regulatorindividually. The internal controller configured to perform concurrentread accesses offer improved efficiency and performance of the memory150 as compared with a memory with an internal controller that does notsupport concurrent access of multiple memory planes.

FIG. 2 illustrates a memory 200 configured to perform concurrent memoryaccess of multiple memory planes according to an embodiment of thepresent disclosure. The memory 200 includes a memory array 230 with aplurality of memory cells. The memory cells may be non-volatile memorycells, such as NAND flash cells, or may generally be any type of memorycells. The memory 200 may be implemented in the memory 150 of FIG. 1. Insome examples, the memory array 230 may be divided into a plurality ofmemory planes.

Command signals, address signals and data signals may be provided to thememory 200 as sets of sequential input/output (“I/O”) signalstransmitted through a command, address, and data (CAD) bus 226.Similarly, data signals may be provided from the memory 200 through theCAD bus 226. The CAD bus 226 may include an I/O bus 228 that isconnected to an internal controller 260. The I/O bus 228 may provide thecommand signals, address signals, and data signals to the internalcontroller 260. The internal controller 260 may route the signalsbetween the I/O bus 228 and an internal data bus 222, and an internaladdress bus 224. The internal controller 260 may be implemented in thememory 150 of FIG. 1. The internal controller 260 may receive a numberof control signals through the CAD bus 226 to control the operation ofthe memory 200. The internal controller 260 may facilitate concurrentmemory access of two or more memory planes of the memory array 230. Insome examples, the internal controller 260 may be configured toconcurrently access two or more memory planes, regardless of page type.For example, the internal controller 260 may receive the memory commandand address pairs, and may provide (e.g., send) signals to the columndecoder 250 and/or the row decoder 240 to configure read level voltageregulator and pass voltage regulator circuits (e.g., based on pagetype), GAL decoder circuits (e.g., based on page location), and blockcontrollers (e.g., based on block selection) associated with the two ormore memory planes of the memory array 230 based on the received memorycommand and address pairs. After configuring the voltage regulatorcircuits, the GAL decoder circuits, and the block controllers, theinternal controller 260 may concurrently access the respective pages ofeach of the two or more memory planes of the memory array 230, forexample, retrieving data or programming data, during the concurrentmemory access operations, for example, by controlling, retrieving datafrom, and/or providing data to page buffers that are associated witheach of the two or more memory planes. The concurrent memory accessoperations may include, for example, charging bitlines, and sensing andlatching data at page buffers.

In some embodiments, the internal controller 260 may concurrently andindependently control the read level voltage regulator and pass voltageregulator circuits of the column decoder 250 and/or the row decoder 240for the concurrent memory access operations (e.g., the read levelvoltage profiles may operate completely independently from each other).In other embodiments, the internal controller 260 may concurrentlycontrol the read level voltage regulator and pass voltage regulatorcircuits of the column decoder 250 and/or the row decoder 240 to provideread level voltage signals having common voltage profiles for theconcurrent memory access operations. For example, the concurrent memoryaccess operation may include a common page type, and thus the read levelvoltage profiles may be common across the two or more planes. In anotherexample, the internal controller 260 may control the read level voltageregulators to provide read level voltage signals having a common voltageprofile that includes read level voltage profiles for two or more memorypage types (e.g., a first read level voltage profile associated with afirst page type during a first time period, a second read level voltageprofile associated with a second page type during a second time period,etc.), and the page buffer circuits may latch a bit during a time periodwhen the read level voltage signal has a value corresponding to thetargeted page type. In another embodiment, the internal controller 260may control each of the read level voltage regulators to provide readlevel voltage signals having a common prologue voltage profile and acommon epilogue voltage profile that bookend an independent read levelvoltage profile selected based on a targeted page type during the readoperation.

The address bus 224 provides block-row address signals to a row decoder240 and column address signals to a column decoder 250. The row decoder240 and column decoder 250 may be used to select blocks of memory ormemory cells for memory operations, for example, read, program, anderase operations. The column decoder 250 may enable data signals to beprovided to columns of memory corresponding to the column addresssignals and allow data signals to be provided from columns correspondingto the column address signals. In some examples, the column decoder 250and/or the row decoder 240 may include a respective GAL decoder circuitand read level voltage regulator and pass voltage regulator circuits foreach memory plane of the memory array 230. The GAL decoder circuits maybe coupled to the respective memory planes via a respective plurality ofglobal access lines.

In response to the memory commands decoded by the internal controller260, the memory cells in the array 230 are read, programmed, or erased.Read, program, erase circuits 268 coupled to the memory array 230receive control signals from the internal controller 260 and includevoltage generators for providing various pumped voltages for read,program and erase operations.

After the row address signals have been provided to the address bus 224,the internal controller 260 provides (e.g., routes) data signals to acache register 270 for a program operation. The data signals are storedin the cache register 270 in successive sets each having a sizecorresponding to the width of the I/O bus 228. The cache register 270sequentially stores the sets of data signals for an entire page (e.g.,row) of memory cells in the array 230. All of the stored data signalsare then used to program a page of memory cells in the array 230selected by the block-row address coupled through the address bus 224.In a similar manner, during a read operation, data signals from a pageof memory cells selected by the block-row address coupled through theaddress bus 224 are stored in a data register 280. Sets of data signalscorresponding in size to the width of the I/O bus 228 are thensequentially transferred through the internal controller 260 from theregister 270 to the I/O bus 228.

FIG. 3 illustrates a memory 300 configured to perform concurrent memoryaccess of multiple memory planes according to an embodiment of thepresent disclosure. The memory 300 includes a memory array including aplurality of memory planes 372(0)-372(3). Each of the memory planes372(0)-372(3) may include a respective plurality of memory cells. Thememory 300 may further include an internal controller 360 including apower control circuit 364 and access control circuit 362 forconcurrently performing memory access operations for multiple memoryplanes 372(0)-372(3). The memory 300 may be implemented in the memory150 of FIG. 1 and/or the memory 200 of FIG. 2. The memory cells may benon-volatile memory cells, such as NAND flash cells, or may generally beany type of memory cells.

The memory planes 372(0)-372(3) may each be divided into blocks of data,with a different relative block of data from each of the memory planes372(0)-372(3) concurrently accessible during memory access operations.For example, during memory access operations, data block 382 of thememory plane 372(0), data block 383 of the memory plane 372(1), datablock 384 of the memory plane 372(2), and data block 385 of the memoryplane 372(3) may each be accessed concurrently. Each of the memoryplanes 372(0)-372(3) may include a respective block controller 390(0-3)that is configured to couple the GAL(0-3) bus lines to a selected blockresponsive to the respective block select signals BLK SEL(0-3). Theblocks 382, 383, 384, and 385 selected by the block controllers390(0)-390(3) depicted in FIG. 3 are for illustrative purposes only. Thememory plane 372(0)-372(3) may have any number of blocks, and a blockcontroller 390(0-3) may have a corresponding number of blockcontrollers.

Each of the memory planes 372(0)-372(3) may be coupled to a respectivepage buffer 376(0)-376(3). Each page buffer 376(0)-376(3) may beconfigured to provide data to or receive data from the respective memoryplane 372(0)-372(3). The page buffers 376(0)-376(3) may be controlled bythe access control 362 of the internal controller 360. Data receivedfrom the respective memory plane 372(0)-372(3) may be latched at thepage buffers 376(0)-376(3), respectively. In some instances, data may belatched by the respective page buffers 376(0)-376(3) and may be providedto the CAD bus, such as via the internal controller 360.

Each of the memory planes 372(0)-372(3) may be further coupled to arespective GAL decoder circuit 374(0)-374(3) via a respective GAL(0-3)bus. The GAL decoder circuits 374(0)-374(3) may be configured to providerespective read level voltage signals VRDLV(0-3) and respective passvoltage signals VPASS to a selected block of an associated memory plane372(0)-372(3) via the respective GAL(0-3) bus during a memory accessoperation. Each of the GAL(0-3) buses may include individual GALs thatare selectively coupled to a respective local access lines of a selectedblock of a plane during a memory access operation associated with a pageof the selected block. The GAL decoder circuits 374(0)-374(3) may becontrolled based on GAL(0-3) CTRL signals from the internal controller360. Each of the GAL decoder circuits 374(0)-374(3) may be coupled to aread level voltage regulator circuit 380(0)-380(3) to receive arespective VRDLV(0-3) signal and to a pass voltage regulator circuit 382to receive the respective VPASS signals. In some embodiments, all of therespective VPASS signals have common voltages and voltage profiles. Inother embodiments, the respective VPASS signals may have differentvoltages and/or voltage profiles based on location relative to theGAL(0-3) receiving the respective VRDLV(0-3) signal. The GAL decodercircuits 374(0)-374(3) may provide the respective VRDLV(0-3) signal toone of the respective GAL(0-3) and one of the respective VPASS signalsto each remaining GAL of the respective GAL(0-3) bus responsive to theGAL(0-3) CTLR signals.

The pass voltage regulator circuit 382 may be configured to provide therespective VPASS voltages based on a VPASS CTRL signal from the internalcontroller 360. The VPASS signals may have voltage profiles that arebased on one or more page types being accessed during a memory accessoperation. The respective VPASS signals may be generated from a VPUMPvoltage. The read level voltage regulator circuits 380(0)-380(3) may beconfigured to provide the respective VRDLV(0-3) signals based on arespective RD LVL(0-3) CTRL signal from the internal controller 360. TheVRDLV(0-3) signals may have respective read level voltage profiles thatare each based on a respective page type being accessed during a memoryaccess operation. The VRDLV(0-3) signals may be generated from a VPUMPvoltage.

The internal controller 360 may control the block controllers390(0)-390(3), the GAL decoder circuits 374(0)-374(3), the pass voltageregulator circuit 382, and the read level voltage regulator circuits380(0)-380(3) to concurrently perform memory access operationsassociated with each of a group of memory command and address pairs(e.g., received from a controller, such as the 110 of FIG. 1). Theinternal controller 360 may include the power control circuit 364 thatconfigures the pass voltage regulator circuit 382 and two or more ofeach of the GAL decoder circuits 374(0)-374(3) and the read levelvoltage regulator circuits 380(0)-380(3) for the concurrent memoryaccess operations. The internal controller 360 may further include theaccess control circuit 362 configured to control two or more of the pagebuffers 376(0)-376(3) to sense and latch data from the respective memoryplanes 372(0)-372(3), or program data to the respective memory planes372(0)-372(3) during the concurrent memory access operations.

In operation, the internal controller 360 may receive a group of memorycommand and address pairs via the CAD bus, with each pair arriving inparallel or serially. In some examples, the group of memory command andaddress pairs may be associated with two or more memory planes372(0)-372(3). The internal controller 360 may be configured to performconcurrent memory access operations (e.g., read operations or programoperations) for the two or more memory planes 372(0)-372(3) responsiveto the group of memory command and address pairs. The internalcontroller 360 may be configured to control memory circuits toconcurrently access multiple memory planes. For example, the powercontrol circuit 364 of the internal controller 360 may configure theread level voltage regulator circuits 380(0)-380(3), the pass voltageregulator circuit 382, the GAL decoder circuits 374(0)-374(3), and theblock controllers 390(0)-390(3) associated with the two or more memoryplanes 372(0)-372(3) for the concurrent memory access operations. Theconfiguration of the block controllers 390(0)-390(3) may includeproviding the respective BLK SEL(0-3) signals to the respective blockcontrollers 390(0)-390(3) to cause a respective GAL(0-3) bus to becoupled to local access lines of a selected block. The configuration ofthe GAL decoder circuits 374(0)-374(3) to provide GAL(0-3) CTRL signalshaving values based on a location of a respective page to be accessedwithin a block. The configuration of the read level voltage regulatorcircuits 380(0)-380(3) and the pass voltage regulator circuit 382 mayinclude providing the RD LVL(0-3) CTRL signals and the VPASS CTRL signalhaving respective values based on a respective page type (e.g., UP, MP,LP, SLC/MLC/TLC page). In some embodiments with a single pass voltageregulator circuit 382, page type combinations may be limited to pagetypes capable of being accessed using a single VPASS signal. In otherembodiments with multiple pass voltage regulator circuits 382, page typecombinations may be open to page types capable of being accessed using adifferent VPASS signals. After the block controllers 390(0)-390(3), theread level voltage regulator circuits 380(0)-380(3), the pass voltageregulator circuit 382, and the GAL decoder circuits 374(0)-374(3) havebeen configured, the access control 362 may cause the page buffers376(0)-376(3) to access the respective pages of each of the two or morememory planes 372(0)-372(3), which may include retrieving data orwriting data during the concurrent memory access operations. Forexample, the access control circuit 362 may concurrently (e.g., inparallel and/or contemporaneously) control the page buffers376(0)-376(3) to charge/discharge bitlines, sense data from the two ormore memory planes 372(0)-372(3), and/or latch the data.

Based on the signals received from the internal controller 360, the GALdecoder circuits 374(0)-374(3) that are coupled to the two or morememory planes 372(0)-372(3) may provide one of the respective VRDLV(0-3)signal or the respective VPASS signal to each individual GAL of therespective GAL(0-3) buses. Further, one of the GAL decoder circuits374(0)-374(3) may provide a respective VRDLV(0-3) signal to a differentrespective GAL of the respective GAL(0-3) bus than the respective GAL ofthe GAL(0-3) bus that is provided the respective VRDLV(0-3) signal byanother of the of the GAL decoder circuits 374(0)-374(3). As an example,the GAL decoder circuit 374(0) may provide the VRDLV(0) signal to afirst GAL of the GAL(0) bus and may provide a respective VPASS signal toremaining GALs of the GAL(0) bus. The GAL decoder circuit 374(1) mayprovide the VRDLV(I) signal to a third GAL of the GAL(1) bus and mayprovide a respective VPASS signal to remaining GALs of the GAL(1) bus.The GAL decoder circuit 374(2) may provide the VRDLV(2) signal to aseventh GAL of the GAL(2) bus and may provide a respective VPASS signalto remaining GALs of the GAL(2) bus, etc. The internal controller 360,the block controllers 390(0)-390(3), the GAL decoder circuits374(0)-374(3), the read level voltage regulator circuits 380(0)-380(3),and the pass voltage regulator circuit 382 may allow differentrespective pages within a different selected block of two or more memoryplanes 372(0)-372(3) to be accessed concurrently. For example, a firstpage of a first block of a first memory plane 372(0) may be accessedconcurrently with a second page of a second block of a second memoryplane 372(1), regardless of page type.

In some embodiments, the power control 364 may control the VRDLV(0-3)signals provided by the read level voltage regulator circuits380(0)-380(3) independently. For example, the power control 364 mayprovide each of the read level control signals RD LVL (0-3) CTRLconcurrently and independently such that a different respectiveVRDLV(0-3) is provided by each of the read level voltage regulatorcircuits 380(0)-380(3). In another embodiment, the power control 364 ofthe internal controller 360 may control the VRDLV(0-3) signals providedby the read level voltage regulator circuits 380(0)-380(3) to have acommon prologue voltage profile and a common epilogue voltage profilethat bookend an independent read level voltage profile selected based ona targeted page type during the memory access operation. For example,FIG. 7 depicts a read voltage profile with a common prologue voltageprofile prior to time T1, a common epilogue voltage profile after timeT2, and an independent read level voltage profile that is selected basedon a page type between times T1 and T2.

In yet another embodiment, the power control 364 may control theVRDLV(0-3) signals provided by the read level voltage regulator circuits380(0)-380(3) to have a common voltage profile that passes through readlevel voltages for more than one page type during the memory accessoperation. For example, the bottom voltage profile of FIG. 6 depicts a1-pass read level voltage profile that includes a LP read level voltageprofile (top voltage profile) and an UP read level voltage profile(middle voltage profile). The LP read may be performed between times T2and T3, and the UP read may be performed between times T3 and T4, aswell as T1 and T2. The access control 362 may control the page buffers376(0)-376(3) to latch data at the appropriate time based on the pagetype. The 1-pass voltage profile for multiple page types may result in alonger memory access operation, but may simplify the internal controller360 as compared with an internal controller capable of providingcompletely independent voltage profiles. Further, similar to the singlepass voltage regulator circuit 382, implementing a 1-pass voltageprofile that encompasses multiple page types may allow the read levelvoltage regulator circuits 380(0)-380(3) to be combined into a singleread level voltage regulator circuit, as a common read level voltageprofile is being provided to each of the two or more memory planes.

The page buffers 376(0)-376(3) may provide data to or receive data fromthe internal controller 360 during the memory access operationsresponsive to signals from the internal controller 360 and therespective memory planes 372(0)-372(3). The internal controller 360 mayprovide the received data to a controller, such as the controller 110 ofFIG. 1.

It will be appreciated that the memory 300 may include more or less thanfour memory planes, GAL decoder circuits, read level voltage regulatorcircuits, and page buffers. It will also be appreciated that each of theGAL(0-3) buses may include 8, 16, 32, 64, 128, etc., individual globalaccess lines. The internal controller 360, the GAL decoder circuits374(0)-374(3), and the read level voltage regulator circuits380(0)-380(3) may concurrently access different respective pages withindifferent respective blocks of multiple memory planes when the differentrespective pages are of a different page type.

FIG. 4 illustrates a memory 400 configured to perform concurrent memoryaccess of multiple memory planes according to an embodiment of thepresent disclosure. The memory 400 includes a memory array including aplurality of memory planes 372(0)-372(3). Each of the memory planes372(0)-372(3) may include a respective plurality of memory cells. Thememory 300 may further include an internal controller 460 including apower control circuit 464 and access control circuit 462 forconcurrently performing memory access operations for multiple memoryplanes 372(0)-372(3). The memory 400 may be implemented in the memory150 of FIG. 1, and/or the memory 200 of FIG. 2. The memory 400 mayinclude elements that have been previously described with respect to thememory 300 of FIG. 3. Those elements have been identified in FIG. 4using the same reference numbers used in FIG. 3 and operation of thecommon elements is as previously described. Consequently, a detaileddescription of the operation of these particular elements will not berepeated in the interest of brevity.

Each of the GAL decoder circuits 374(0)-374(3) may be coupled to a readlevel voltage regulator circuit 380(0)-380(3) to receive a respectiveVRDLV(0-3) signal and to a respective pass voltage regulator circuit482(0)-482(3) to receive respective pass voltage signals VPASS(0-3). TheGAL decoder circuits 374(0)-374(3) may provide one of the respectiveVRDLV(0-3) voltage or the respective VPASS(0-3) signal to eachindividual GAL of the respective GAL(0-3) bus responsive to the GAL(0-3)CTLR signals.

The pass voltage regulator circuits 482(0)-482(3) may be configured toprovide the respective VPASS(0-3) signals based on a respectiveVPASS(0-3) CTRL signal from the internal controller 460. The VPASS(0-3)signals may have respective voltage profiles that are each based on arespective page type being accessed during a memory access operationand/or based on a location of a particular GAL within the block ofGAL(0-3). The VPASS(0-3) signals may be generated from a VPUMP voltage.

The internal controller 460 may control the block controllers390(0)-390(3), the GAL decoder circuits 374(0)-374(3), the pass voltageregulator circuits 482(0)-482(3), and the read level voltage regulatorcircuits 380(0)-380(3) to concurrently perform memory access operationsassociated with each of a group of memory command and address pairs(e.g., received from a controller, such as the 110 of FIG. 1). Theinternal controller 460 may include the power control circuit 464 thatconfigures two or more of each of the block controllers 390(0)-390(3),the GAL decoder circuits 374(0)-374(3), the pass voltage regulatorcircuits 482(0)-482(3), and the read level voltage regulator circuits380(0)-380(3) for the concurrent memory access operations. The internalcontroller 460 may further include the access control circuit 462configured to control two or more of the page buffers 376(0)-376(3) tosense and latch data from the respective memory planes 372(0)-372(3), orprogram data to the respective memory planes 372(0)-372(3) to performthe concurrent memory access operations.

In operation, the internal controller 460 may receive a group of memorycommand and address pairs via the CAD bus. In some examples, the groupof memory command and address pairs may each be associated with adifferent respective memory plane 372(0)-372(3). The internal controller460 may be configured to perform concurrent memory access operations(e.g., read operations or program operations) for the multiple memoryplanes 372(0)-372(3) responsive to the group of memory command andaddress pairs. In some examples, the group of memory command and addresspairs may be associated with two or more memory planes 372(0)-372(3).The internal controller 460 may be configured to perform concurrentmemory access operations (e.g., read operations or program operations)for the two or more memory planes 372(0)-372(3) responsive to the groupof memory command and address pairs. The internal controller 360 may beconfigured to control memory circuits to concurrently access multiplememory planes. For example, the power control circuit 464 of theinternal controller 460 may configure the read level voltage regulatorcircuits 380(0)-380(3), the pass voltage regulator circuits482(0)-482(3), the GAL decoder circuits 374(0)-374(3), and the blockcontrollers 390(0)-390(3) associated with the two or more memory planes372(0)-372(3) for the concurrent memory access operations. Theconfiguration of the block controllers 390(0)-390(3) may includeproviding the respective BLK SEL(0-3) signals to the respective blockcontrollers 390(0)-390(3) to cause a respective GAL(0-3) bus to becoupled to local access lines of a selected block. The configuration ofthe GAL decoder circuits 374(0)-374(3) may include provisions ofGAL(0-3) CTRL signals having values based on a location of a respectivepage to be accessed within a block. The configuration of the read levelvoltage regulator circuits 380(0)-380(3) and the pass voltage regulatorcircuits 482(0)-482(3) may include providing the RD LVL(0-3) CTRLsignals and the VPASS CTRL(0-3) signals having respective values basedon a respective page type (e.g., UP, MP, LP, SLC/MLC/TLC page).Independently controlling the pass voltage regulator circuits482(0)-482(3) may allow any page type combination to be concurrentlyaccessed. After the block controllers 390(0)-390(3), the read levelvoltage regulator circuits 380(0)-380(3), the pass voltage regulatorcircuits 482(0)-482(3), and the GAL decoder circuits 374(0)-374(3) havebeen configured, the access control 362 may cause the page buffers376(0)-376(3) to access the respective pages of each of the two or morememory planes 372(0)-372(3), which may include retrieving data orwriting data, during the concurrent memory access operations. Forexample, the access control circuit 362 may concurrently (e.g., inparallel and/or contemporaneously) control the page buffers376(0)-376(3) to charge/discharge bitlines, sense data from the two ormore memory planes 372(0)-372(3), and/or latch the data.

Based on the signals received from the internal controller 460, the GALdecoder circuits 374(0)-374(3) that are coupled to the two or morememory planes 372(0)-372(3) may provide one of the respective VRDLV(0-3)signal or the respective VPASS(0-3) signal to each individual GAL of therespective GAL(0-3) buses. Further, one of the GAL decoder circuits374(0)-374(3) may provide a respective VRDLV(0-3) signal to a differentrespective GAL of the respective GAL(0-3) bus than the respective GAL ofthe GAL(0-3) bus that is provided the respective VRDLV(0-3) signal byanother of the of the GAL decoder circuits 374(0)-374(3). As an example,the GAL decoder circuit 374(0) may provide the VRDLV(0) signal to afirst GAL of the GAL(0) bus and may provide the respective VPASS(0)signal to remaining GALs of the GAL(0) bus. In some examples, theVPASS(0) signal may represent more than on VPASS voltage profile orvoltage signal. The GAL decoder circuit 374(1) may provide the VRDLV(I)signal to a third GAL of the GAL(1) bus and may provide the respectiveVPASS(1) signal to remaining GALs of the GAL(1) bus. In some examples,the VPASS(1) signal may represent more than on VPASS voltage profile orvoltage signal. The GAL decoder circuit 374(2) may provide the VRDLV(2)signal to a seventh GAL of the GAL(2) bus and may provide the respectiveVPASS(2) signal to remaining GALs of the GAL(2) bus, etc. In someexamples, the VPASS(2) signal may represent more than on VPASS voltageprofile or voltage signal. The internal controller 460, the blockcontrollers 390(0)-390(3), the GAL decoder circuits 374(0)-374(3), theread level voltage regulator circuits 380(0)-380(3), and the passvoltage regulator circuits 482(0)-482(3) may allow different respectivepages within a different selected block of two or more memory planes372(0)-372(3) to be accessed concurrently.

In some embodiments, the power control 464 of the internal controller460 may control the VRDLV(0-3) signals provided by the read levelvoltage regulator circuits 380(0)-380(3) independently, and may alsocontrol the VPASS(0-3) signals provided by the pass voltage regulatorcircuits 382(0)-382(3) independently. In another embodiment, the powercontrol 464 may control the VRDLV(0-3) signals provided by the readlevel voltage regulator circuits 380(0)-380(3) to have a common prologuevoltage profile and a common epilogue voltage profile that bookend anindependent read level voltage profile selected based on a targeted pagetype during the memory access operation. In yet another embodiment, thepower control 464 may control the VRDLV(0-3) signals provided by theread level voltage regulator circuits 380(0)-380(3) to have a commonvoltage profile that passes through read level voltages for more thanone page type during the memory access operation.

The page buffers 376(0)-376(3) may provide data to or receive data fromthe internal controller 460 during the memory access operationsresponsive to signals from the internal controller 460 and therespective memory planes 372(0)-372(3). The internal controller 460 mayprovide the received data to a controller, such as the controller 110 ofFIG. 1.

It will be appreciated that the memory 400 may include more or less thanfour memory planes, GAL decoder circuits, read level voltage regulatorcircuits, pass voltage regulator circuits, and page buffers. It willalso be appreciated that each of the GAL(0-3) buses may include 8, 16,32, 64, 128, etc., individual global access lines. The internalcontroller 460, the GAL decoder circuits 374(0)-374(3), and the readlevel voltage regulator circuits 380(0)-380(3) may concurrently accessdifferent respective pages within different respective blocks ofmultiple memory planes when the different respective pages are of adifferent page type.

FIG. 5 illustrates a portion of a memory 500 configured to performconcurrent memory access of multiple memory planes according to anembodiment of the present disclosure. The portion of the memory 500includes a GAL decoder circuit 574 having GAL0-N multiplexer circuits576(0)-576(N). The portion of the memory 500 may further include aninternal controller 560 including a power control circuit 564 configuredto control the GAL decoder circuit 574. The portion of the memory 500may further include a read level voltage regulator 580, a pass voltageregulator 582, and a voltage pump 584. The portion of the memory 500 maybe implemented in the memory 150 of FIG. 1 and/or the memory 200 of FIG.2. The GAL decoder circuit 574 may be implemented in any of the GALdecoder circuits 374(0)-374(3) of FIGS. 3 and/or 4, and the internalcontroller 560 may be implemented in the internal controller 260 of FIG.2, the internal controller 360 of FIG. 3, and/or the internal controller460 of FIG. 4.

During a memory access operation, each of GAL0-N multiplexer circuits576(0)-576(N) may be configured to provide a VRDLV signal to one ofrespective GAL0-N lines and respective VPASS signals to respectiveremaining GAL0-N lines responsive to a respective GAL CTRL 0-N signalfrom the internal controller 560. The GAL0-N lines may correspond to aset of lines of any one of the GAL(0-3) buses of FIG. 3 or 4. In someexamples, the VRDLV signal may be provided on one of the GAL0-N lines,and the VPASS signal may be provided to the remaining GAL0-N linesduring the memory access operation.

The voltage pump 584 may provide a pumped voltage VPUMP to the readlevel voltage regulator 580 and the pass voltage regulator 582. The readlevel voltage regulator 580 and the pass voltage regulator 582 mayprovide the VRDLV signal and the respective VPASS signals, respectively,from the VPUMP voltage. The read level voltage regulator 580 may providethe VRDLV signal responsive to the RD LVL CTRL signal from the internalcontroller 560. The VRDLV signal may have a profile that is based on apage type being accessed during the memory access operation. The passvoltage regulator 582 may provide the respective VPASS signalsresponsive to the VPASS CTRL signal from the internal controller 560.The VPASS signals may have a value that is based on a page type beingaccessed during the memory access operation and/or based on a locationother GALs relative to the GAL to be accessed via the VRDLV signal.

While FIG. 5 only depicts a single GAL decoder circuit 574, a singleread level voltage regulator 580, and a single pass voltage regulator582, the portion of the memory 500 may include two or more of some oreach and the internal controller 560 may concurrently configure the twoor more GAL decoder circuits, the two or more VRDLV signal regulatorcircuits, and the two or more VPASS signal regulator circuits during amemory access operation. Control of the GAL decoder circuit 574 by theinternal controller 560 may include controlling each of the GAL0-Nmultiplexer circuits 576(0)-576(N). The internal controller 560 mayinclude the power control circuit 564 that configures the read levelvoltage regulator 580, the pass voltage regulator 582, and the GAL0-Nmultiplexer circuits 576(0)-576(N) of the GAL decoder circuit 574 toprovide one of a VRDLV or VPASS signals to the GAL0-N lines during thememory access operation.

In operation, the internal controller 560 may receive a group of memorycommand and address pairs via the CAD bus. In some examples, the groupof memory command and address pairs may each be associated with adifferent respective memory plane (not shown). The internal controller560 may be configured to perform concurrent memory access operations(e.g., read operations or program operations) for the multiple memoryplanes responsive to the group of memory command and address pairs.

In performing the memory access operation on one of the memory planes,the power control circuit 564 of the internal controller 560 mayconfigure the read level voltage regulator 580, the pass voltageregulator 582, and each of the GAL0-N multiplexer circuits 576(0)-576(N)of the GAL decoder circuit 574 to provide one of the VRDLV signal or therespective VPASS signals to the GAL0-N lines when the one of the memoryplanes is associated with one of the group of memory command and addresspairs for the concurrent memory access operation. The configuration ofthe read level voltage regulator 580 and the pass voltage regulator 582may be based on respective page type (e.g., UP, MP, LP, SLC/MLC/TLCpage), as the VRDLV and VPASS signals required to access a page may bebased on a page type. After the read level voltage regulator 580, thepass voltage regulator 582, and the GAL decoder circuit 574 have beenconfigured to provide one of the VRDLV or VPASS signals on each of theGAL0-N lines, the internal controller 560 may access a respective memorypage coupled to the GALP0-N lines.

In some embodiments, the power control 564 may control the VRDLV signalsprovided by the read level voltage regulator circuit 580 may have avoltage profile that passes through read level voltages for more thanone page type during the memory access operation. In another embodiment,the power control 564 may control the VRDLV signal provided by the readlevel voltage regulator circuits 580 to have a prologue voltage profileand an epilogue voltage profile that bookend an independent read levelvoltage profile selected based on a targeted page type during the memoryaccess operation.

It will be appreciated that the portion of the memory 500 may includemore than one GAL decoder circuit, read level voltage regulatorcircuits, and pass voltage regulator circuits. It will also beappreciated that each of the GAL0-N may include 8, 16, 32, 64, 128,etc., global access lines.

From the foregoing it will be appreciated that, although specificembodiments of the disclosure have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the disclosure. Accordingly, the disclosure isnot limited except as by the appended claims.

1. (canceled)
 2. A memory device comprising: a memory array comprising aplurality of memory planes; and control logic, operatively coupled withthe memory array, the control logic to perform operations comprising:providing a first plurality of control signals to a plurality of voltageregulator circuits, wherein the plurality of voltage regular circuits isconfigured to provide, based on the first plurality of control signals,respective memory access voltage signals to a plurality of global accessline decoder circuits; and providing a second plurality of controlsignals to the plurality of global access line decoder circuits, whereinthe plurality of global access line decoder circuits is configured toconcurrently provide, based on the second plurality of control signals,the respective memory access voltage signals to the plurality of memoryplanes during concurrent memory access operations on the plurality ofmemory planes, wherein the respective memory access voltage signals haverespective voltage profiles associated with respective page types beingaccessed during the concurrent memory access operations on the pluralityof memory planes.
 3. The memory device of claim 2, wherein each of theplurality of voltage regulator circuits is associated with a respectiveone of the plurality of global access line decoder circuits.
 4. Thememory device of claim 2, wherein each of the plurality of global accessline decoder circuits is associated with a respective one of theplurality of memory planes.
 5. The memory device of claim 2, wherein thecontrol logic is to perform operations further comprising: providing athird control signal to a pass voltage regulator circuit, wherein thepass voltage regulator circuit is configured to provide, based on thethird control signal, a pass voltage signal to the plurality of globalaccess line decoder circuits.
 6. The memory device of claim 2, whereinthe control logic is to perform operations further comprising: providinga third plurality of control signals to a plurality of pass voltageregulator circuits, wherein the plurality of pass voltage regulatorcircuits is configured to provide, based on the third plurality ofcontrol signals, respective pass voltage signals to the plurality ofglobal access line decoder circuits.
 7. The memory device of claim 6,wherein each of the plurality of pass voltage regulator circuits isassociated with a respective one of the plurality of global access linedecoder circuits.
 8. The memory device of claim 2, wherein therespective memory access voltage signals having respective voltageprofiles associated with the respective page types being accessed duringthe concurrent memory access operations on the plurality of memoryplanes comprise a first memory access voltage signal having a differentvoltage profile than a second memory access voltage signal.
 9. Thememory device of claim 8, wherein a first global access line decodercircuit of the plurality of global access line decoder circuits isconfigured to provide, based on a first control signal of the secondplurality of control signals, the first memory access voltage signal toa first memory plane of the plurality of memory planes, and a secondglobal access line decoder circuit of the plurality of global accessline decoder circuits is configured to provide, based on a secondcontrol signal of the second plurality of control signals, the secondmemory access voltage signal to a first memory plane of the plurality ofmemory planes concurrently.
 10. The memory device of claim 2, whereinthe respective memory access voltage signals having respective voltageprofiles associated with the respective page types being accessed duringthe concurrent memory access operations on the plurality of memoryplanes comprise a first memory access voltage signal and a second memoryaccess voltage signal having a common voltage profile associated withmore than one page type.
 11. The memory device of claim 2, wherein thecontrol logic is to perform operations further comprising: providing afourth plurality of control signals to a plurality of respective blockcontrollers associated with the plurality of memory planes, wherein theplurality of respective block controllers is configured to select, basedon the fourth plurality of control signals, respective blocks of theplurality of memory planes to which the respective memory access voltagesignals are applied.
 12. A method comprising: providing a firstplurality of control signals to a plurality of voltage regulatorcircuits, wherein the plurality of voltage regular circuits isconfigured to provide, based on the first plurality of control signals,respective memory access voltage signals to a plurality of global accessline decoder circuits; and providing a second plurality of controlsignals to the plurality of global access line decoder circuits, whereinthe plurality of global access line decoder circuits is configured toconcurrently provide, based on the second plurality of control signals,the respective memory access voltage signals to the plurality of memoryplanes during concurrent memory access operations on a plurality ofmemory planes, wherein the respective memory access voltage signals haverespective voltage profiles associated with respective page types beingaccessed during the concurrent memory access operations on the pluralityof memory planes.
 13. The method of claim 10, wherein each of theplurality of voltage regulator circuits is associated with a respectiveone of the plurality of global access line decoder circuits.
 14. Themethod of claim 10, wherein each of the plurality of global access linedecoder circuits is associated with a respective one of the plurality ofmemory planes.
 15. The method of claim 10, further comprising: providinga third control signal to a pass voltage regulator circuit, wherein thepass voltage regulator circuit is configured to provide, based on thethird control signal, a pass voltage signal to the plurality of globalaccess line decoder circuits.
 16. The method of claim 10, furthercomprising: providing a third plurality of control signals to aplurality of pass voltage regulator circuits, wherein the plurality ofpass voltage regulator circuits is configured to provide, based on thethird plurality of control signals, respective pass voltage signals tothe plurality of global access line decoder circuits.
 17. The method ofclaim 14, wherein each of the plurality of pass voltage regulatorcircuits is associated with a respective one of the plurality of globalaccess line decoder circuits.
 18. The method of claim 10, wherein therespective memory access voltage signals having respective voltageprofiles associated with the respective page types being accessed duringthe concurrent memory access operations on the plurality of memoryplanes comprise a first memory access voltage signal having a differentvoltage profile than a second memory access voltage signal.
 19. Themethod of claim 16, wherein a first global access line decoder circuitof the plurality of global access line decoder circuits is configured toprovide, based on a first control signal of the second plurality ofcontrol signals, the first memory access voltage signal to a firstmemory plane of the plurality of memory planes, and a second globalaccess line decoder circuit of the plurality of global access linedecoder circuits is configured to provide, based on a second controlsignal of the second plurality of control signals, the second memoryaccess voltage signal to a first memory plane of the plurality of memoryplanes concurrently.
 20. The method of claim 10, wherein the respectivememory access voltage signals having respective voltage profilesassociated with the respective page types being accessed during theconcurrent memory access operations on the plurality of memory planescomprise a first memory access voltage signal and a second memory accessvoltage signal having a common voltage profile associated with more thanone page type.
 21. The method of claim 10, further comprising: providinga fourth plurality of control signals to a plurality of respective blockcontrollers associated with the plurality of memory planes, wherein theplurality of respective block controllers is configured to select, basedon the fourth plurality of control signals, respective blocks of theplurality of memory planes to which the respective memory access voltagesignals are applied.